Model Parameter Extraction for Very Advanced Heterojunction Bipolar Transistors
- 196 pages
- 7 hours of reading
The book delves into the critical role of semiconductor device modeling in meeting the stringent performance demands of high-performance applications. It emphasizes the complexity and cost of modern devices, highlighting the need for sophisticated compact models that accurately reflect the physical effects in advanced Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs). Additionally, it discusses the importance of model parameters in ensuring the practical applicability of these models in the industry.
