Winfried Mönch Book order

Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interface–induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling’s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

Die alliierte Invasion 1944 war schon in der Erwartung der Zeitgenossen die Entscheidungsschlacht des Zweiten Weltkrieges. Hier materialisierten sich verschiedene militärtheoretische Annahmen hinsichtlich eines kommenden 'Zukunftskrieges', die in der Zwischenkriegszeit entwickelt worden waren. Hauptsächlich konkurrierten zwei Denkstile miteinander, die als wirtschaftlicher Determinismus und militärischer Dezisionismus bezeichnet werden können. Der erste sah in den ökonomischen Potentialen der Mächte den kriegsentscheidenden Faktor, während der letztere 'die Entscheidung' in den Entschlüssen der militärischen Führung festmachte. Die Studie diskutiert die für die Vorgänge der Invasion genannten entscheidenden Faktoren und untersucht die Rezeption und die Verwertung des historischen Ereignisses 'Invasion' anhand der militärtheoretischen Diskussionen und der Geschichtsschreibung.

Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces. The first part introduces the general aspects of space-charge layers, of clean-surface and adatom-induced surfaces states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts. Where available, results of more refined calculations are considered. This third edition has been thoroughly revised and updated. In particular it now includes an extensive discussion of the band lineup at semiconductor interfaces. The unifying concept is the continuum of interface-induced gap states.