Atomic layer deposition of aluminum oxide on crystalline silicon
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In the present dissertation, Florian Werner investigates the application of atomic layer deposition (ALD) of amorphous aluminum oxide (Al2O3) dielectric layers to silicon solar cells. Highlights of his thesis include: - A novel spatial ALD process, which is compatible with industry demands. - A comprehensive model of the c-Si/Al2O3 interface, which describes the chemical composition of the deposited film and electron-hole recombination at the interface. - An improved parameterization of intrinsic lifetimes in silicon, which accounts for Coulomb-enhanced Auger and radiative recombination. - An Al2O3-induced hole inversion layer (IL) as hole-collecting emitter in IL solar cells made on n-type silicon, allowing efficiencies above 26%.
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Atomic layer deposition of aluminum oxide on crystalline silicon, Florian Werner
- Language
- Released
- 2014
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- Title
- Atomic layer deposition of aluminum oxide on crystalline silicon
- Language
- English
- Authors
- Florian Werner
- Publisher
- Shaker
- Released
- 2014
- ISBN10
- 3844030395
- ISBN13
- 9783844030396
- Series
- Berichte aus der Physik
- Category
- University and college textbooks
- Description
- In the present dissertation, Florian Werner investigates the application of atomic layer deposition (ALD) of amorphous aluminum oxide (Al2O3) dielectric layers to silicon solar cells. Highlights of his thesis include: - A novel spatial ALD process, which is compatible with industry demands. - A comprehensive model of the c-Si/Al2O3 interface, which describes the chemical composition of the deposited film and electron-hole recombination at the interface. - An improved parameterization of intrinsic lifetimes in silicon, which accounts for Coulomb-enhanced Auger and radiative recombination. - An Al2O3-induced hole inversion layer (IL) as hole-collecting emitter in IL solar cells made on n-type silicon, allowing efficiencies above 26%.