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Festkörperprobleme

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InhaltsverzeichnisCharge-induced structural relaxation in hydrogenated amorphous silicon.- Magnetooptics of two-dimensional electrons under the conditions of integral and fractional quantum hall effect in Si-MOSFETs and GaAs-AlGaAs single heterojunctions.- Microwave investigations of the quantum hall effect in GaAs/AlGaAs heterostructures.- Recent developments in the theory of highly excited semiconductors.- The development of a 4 Mbit DRAM.- Fabrication and optical spectroscopy of ultra small III–V compound semiconductor structures.- Quasi-One-Dimensional electron systems on GaAs/AlGaAs heterojunctions.- On the theory of high Tc superconductors.

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Festkörperprobleme, U. Rossler

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1989
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