Modeling of ballistic carbon nanotube transistors for analog high-frequency applications

Carbon nanotube field effect transistors (CNTFETs) are claimed to likely replace MOSFETs in high-frequency front-end circuits such as power and low-noise amplifiers. The one-dimensional transport and the related low scattering rate of the charge carriers in CNTFETs promise low noise, low power dissipation and high linearity. CNTFETs are thus ideally suited for communication systems. Recent major advances towards a production-type CNTFET process technology underline this assumption. However, CNTFET simulation accuracy and capability are still quite limited although they are crucial for gaining an understanding of high-frequency operation and for optimizing device design. This thesis aims to bridge the gap between currently available and upcoming necessity for simulation accuracy and capability. A physicsbased description of ballistic transport phenomena in CNTFETs and suitable analytical models support an intuitive understanding of CNTFET behavior. An elaborated appendix has been added to give the interested reader insight into the concepts of quantum theory needed in this thesis.