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- 148 pages
- 6 hours of reading
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The book focuses on advanced techniques for both production and periodic maintenance testing of semiconductor memory, particularly addressing multi-cell faults. It explores background selection and address reordering algorithms within multi-run transparent march testing processes. The author presents formal methods for generating multi-run tests, emphasizing solutions to enhance efficiency. Each method is thoroughly validated through analytical investigations and numerical simulations, ensuring a comprehensive understanding of the testing processes in modern semiconductor technology.
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Multi-run Memory Tests for Pattern Sensitive Faults, Ireneusz Mrozek
- Language
- Released
- 2019
- product-detail.submit-box.info.binding
- (Paperback)
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