Model Parameter Extraction for Very Advanced Heterojunction Bipolar Transistors

More about the book

The book delves into the critical role of semiconductor device modeling in meeting the stringent performance demands of high-performance applications. It emphasizes the complexity and cost of modern devices, highlighting the need for sophisticated compact models that accurately reflect the physical effects in advanced Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs). Additionally, it discusses the importance of model parameters in ensuring the practical applicability of these models in the industry.