In pursuit of a novel generation of devices, exploration of spin properties of the particles is needed. Spintronics is a modern field in physics which exploits spin properties to be used in addition to the charge degree of freedom. Since the conductivity mismatch problem presents a fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor, other means for injecting spin-polarized carriers must be used. With a tunnel contact, it is possible to achieve a highly spin-polarized room-temperature tunnel injection. Here we describe a novel approach of applying magnetic resonant tunneling diodes for spin manipulation. In this work, growth and properties of all-II-VI magnetic resonant tunneling diodes, as applied to spintronics, are reported.
