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The book delves into the innovative field of spintronics, focusing on the exploration of particle spin properties to enhance device functionality. It addresses the conductivity mismatch issue that hinders effective electrical spin injection from ferromagnetic metals into semiconductors, proposing alternative methods for injecting spin-polarized carriers. The text presents a novel application of magnetic resonant tunneling diodes for spin manipulation, detailing the growth and properties of all-II-VI magnetic resonant tunneling diodes relevant to spintronic applications.

In pursuit of a novel generation of devices, exploration of spin properties of the particles is needed. Spintronics is a modern field in physics which exploits spin properties to be used in addition to the charge degree of freedom. Since the conductivity mismatch problem presents a fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor, other means for injecting spin-polarized carriers must be used. With a tunnel contact, it is possible to achieve a highly spin-polarized room-temperature tunnel injection. Here we describe a novel approach of applying magnetic resonant tunneling diodes for spin manipulation. In this work, growth and properties of all-II-VI magnetic resonant tunneling diodes, as applied to spintronics, are reported.