BBr3 boron diffusion process for p+-Emitter formation of n-type silicon solar cells
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The liquid-source BBr3 technology to diffuse a boron p+-emitter is the state-of-the-art laboratory technology for p+-emitter formation and is a feature of the current world record silicon solar cell with n=25.0%. Nevertheless the BBr3 boron diffusion process for p+-emitter formation is little spread in industrial cell manufacturing due to technological challenges. A detailed experimental study shows the implications of the formation of an undesirable boron-rich layer (BRL) during the boron diffusion process. The passivation of boron emitter surfaces is investigated experimentally and using numerical simulations. Based on an industrial manufacturing scheme an n-type solar cell with boron emitter and in-line evaporated aluminum grid is developed and reaches a conversion efficiency of n=19.6%. The results of this work can help to accelerate the industrial implementation of boron p+-emitter for n-type silicon solar cells.
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BBr3 boron diffusion process for p+-Emitter formation of n-type silicon solar cells, Michael Kessler
- Language
- Released
- 2013
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- Title
- BBr3 boron diffusion process for p+-Emitter formation of n-type silicon solar cells
- Language
- English
- Authors
- Michael Kessler
- Publisher
- TEWISS - Technik-und-Wissen-GmbH
- Released
- 2013
- Format
- Hardcover
- ISBN10
- 3944586182
- ISBN13
- 9783944586182
- Category
- University and college textbooks
- Description
- The liquid-source BBr3 technology to diffuse a boron p+-emitter is the state-of-the-art laboratory technology for p+-emitter formation and is a feature of the current world record silicon solar cell with n=25.0%. Nevertheless the BBr3 boron diffusion process for p+-emitter formation is little spread in industrial cell manufacturing due to technological challenges. A detailed experimental study shows the implications of the formation of an undesirable boron-rich layer (BRL) during the boron diffusion process. The passivation of boron emitter surfaces is investigated experimentally and using numerical simulations. Based on an industrial manufacturing scheme an n-type solar cell with boron emitter and in-line evaporated aluminum grid is developed and reaches a conversion efficiency of n=19.6%. The results of this work can help to accelerate the industrial implementation of boron p+-emitter for n-type silicon solar cells.